BUK762R7-30B_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK762R7-30B
N-channel TrenchMOS standard level FET
100
I_D
(A)
75
50
25
0
0
03nh12
T_j = 175 °C
T_j = 25 °C
2
4
6
V_GS (V)
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
10
03nh15
2
R_DSon
5
(mΩ)
Label is V_GS (V)
a
5.5
8
1.5
03aa27
6
6
6.5
4
7
8
10
2
0
70
140
210
280
350
I_D (A)
1
0.5
0
−60
0
60
120 _{Tj (°C)} 180
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK762R7-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 8 June 2010
© NXP B.V. 2010. All rights reserved.
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