BUK7608-55A_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7608-55A
N-channel TrenchMOS standard level FET
10
V_GS
(V)
8
6
4
2
0
0
03nh41
V_DD = 14 (V)
V_DD = 44 (V)
20
40
60
80
Q_G (nC)
7000
C
(pF)
6000
5000
4000
3000
2000
1000
0
10^−2
C_iss
C_oss
C_rss
10^−1
1
03nh47
10
10²
V_DS (V)
Fig 13. Gate-source voltage as a function of turn-on
gate charge; typical values
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
100
I_S
(A)
80
03nh40
T_j = 175 °C
60
40
T_j = 25 °C
20
0
0
0.2 0.4 0.6 0.8 1.0 1.2
V_SD (V)
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
BUK7608-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 14 June 2010
© NXP B.V. 2010. All rights reserved.
9 of 14