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| BUK7608-55A_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK7608-55A
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ⥠25 °C; Tj ⤠175 °C
-
-
RGS = 20 kâ¦
-
-
-20 -
Tmb = 25 °C; VGS = 10 V; see Figure 1; [1] -
-
see Figure 3
55 V
55 V
20 V
126 A
Tmb = 100 °C; VGS = 10 V; see Figure 1 [2] -
-
75 A
Tmb = 25 °C; VGS = 10 V; see Figure 1; [2] -
-
75 A
see Figure 3
IDM
peak drain current
Tmb = 25 °C; tp ⤠10 µs; pulsed;
see Figure 3
-
-
504 A
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
-
-
-55 -
-55 -
254 W
175 °C
175 °C
IS
source current
Tmb = 25 °C
[2] -
-
75 A
[1] -
-
126 A
ISM
peak source current
Avalanche ruggedness
tp ⤠10 µs; pulsed; Tmb = 25 °C
-
-
504 A
EDS(AL)S
non-repetitive drain-source ID = 75 A; Vsup ⤠55 V; RGS = 50 â¦;
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; unclamped
-
-
670 mJ
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
BUK7608-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 â 14 June 2010
© NXP B.V. 2010. All rights reserved.
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