BUK7608-55A_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7608-55A
N-channel TrenchMOS standard level FET
I_D ¹⁶⁰ 18 V
(A)
140
120
10 V
8.0 V
100
80
60
40
20
0
0
2
4
03nh45
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V_GS = 4.5 V
6
8
10
V_DS (V)
14
R_DSon
(mΩ)
12
10
8
6
5
03nh44
10
15
20
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
10^−3
03aa35
min typ max
60
g_fs
(S)
40
03nh42
10^−4
20
10^−5
10^−6
0
2
4
6
V_GS (V)
0
0
20
40
60
80
100
I_D (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7608-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 14 June 2010
© NXP B.V. 2010. All rights reserved.
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