BUK7608-55A_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7608-55A
N-channel TrenchMOS standard level FET
Rev. 03 — 14 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1; see Figure 3
P_tot
total power dissipation T_mb = 25 °C; see Figure 2
Static characteristics
R_DSon
drain-source on-state
resistance
V_GS = 10 V; I_D = 25 A;
T_j = 175 °C; see Figure 11;
see Figure 12
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 11;
see Figure 12
Min Typ Max Unit
-
-
55 V
[1] _-
-
75 A
-
-
254 W
-
-
16 mΩ
-
6.8 8
mΩ