BUK755R2-40B_15 Datasheet, PDF (9/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK755R2-40B
N-channel TrenchMOS standard level FET
100
03nk14
IS
(A)
75
50
25
0
0.0
Tj = 175 °C
0.3
0.6
Tj = 25 °C
0.9
1.2
VSD (V)
10
VGS
(V)
8
6
4
2
0
0
03nk15
VDD = 14 V
VDD = 32 V
20
40
60
QG (nC)
Fig 13. Source current as a function of source-drain
voltage; typical values
Fig 14. Gate-source voltage as a function of gate
charge; typical values
4000
C
(pF)
3000
2000
Ciss
Coss
03nk21
1000
0
10-1
Crss
1
10
102
VDS (V)
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
BUK755R2-40B_2
Product data sheet
Rev. 02 — 16 January 2009
© NXP B.V. 2009. All rights reserved.
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