BUK755R2-40B_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK755R2-40B
N-channel TrenchMOS standard level FET
150
ID
(A)
100
Capped at 75 A due to package
50
03nj26
120
P_der
(%)
80
40
03na19
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
103
ID
(A)
102
10
Limit RDSon = VDS/ID
Capped at 75 A due to package
DC
03nj24
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
1
10-1
1
10
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK755R2-40B_2
Product data sheet
Rev. 02 — 16 January 2009
© NXP B.V. 2009. All rights reserved.
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