BUK755R2-40B_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK755R2-40B
N-channel TrenchMOS standard level FET
Rev. 02 — 16 January 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Q101 compliant
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
-
-
40 V
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; [1] -
-
75 A
see Figure 1; see Figure 3;
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
203 W
Avalanche ruggedness
E_DS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
I_D = 75 A; V_sup ≤ 40 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
-
-
494 mJ
Q_GD
gate-drain charge V_GS = 10 V; I_D = 25 A;
V_DS = 32 V; T_j = 25 °C; see
Figure 14
-
16 -
nC
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 11;
see Figure 12
-
4.4 5.2 mΩ
[1] Continuous current is limited by package.