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BUK755R2-40B_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
BUK755R2-40B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3;
Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3;
Tmb = 100 °C; VGS = 10 V; see Figure 1;
Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3
Tmb = 25 °C; see Figure 2
-
-
-20
[1] -
[2] -
[2] -
-
-
-55
-55
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C;
Tmb = 25 °C;
tp ≤ 10 µs; pulsed; Tmb = 25 °C
[1] -
[2] -
-
EDS(AL)S non-repetitive
ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V;
-
drain-source avalanche Tj(init) = 25 °C; unclamped
energy
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Max Unit
40
V
40
V
20
V
143 A
75
A
75
A
573 A
203 W
175 °C
175 °C
143 A
75
A
573 A
494 mJ
BUK755R2-40B_2
Product data sheet
Rev. 02 — 16 January 2009
© NXP B.V. 2009. All rights reserved.
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