BUK7526-100B Datasheet, PDF (9/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/7626-100B
TrenchMOS™ standard level FET
100
ID
(A)
75
50
25
03nm38
Tj = 175 °C
Tj = 25 °C
10
VGS
(V)
8
6
4
2
03nm36
VDD = 14 V
VDD = 80 V
0
0
2
4
6
8
VGS (V)
0
0
10
20
30
40
QG (nC)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
100
IS
(A)
75
03nm35
50
25
Tj = 175 °C
Tj = 25 °C
0
0.0
0.5
1.0 _{VSD (V)} 1.5
V_GS = 0 V
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
9397 750 11238
Product data
Rev. 01 — 11 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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