BUK7526-100B Datasheet, PDF (4/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/7626-100B
TrenchMOS™ standard level FET
4. Thermal characteristics
Table 3: Thermal characteristics
Symbol Parameter
Conditions
R_th(j-mb) thermal resistance from junction to
mounting base
Figure 4
R_th(j-a)
thermal resistance from junction to ambient
SOT78 (TO-220AB)
vertical in still air
SOT404 (D²-PAK)
minimum footprint; mounted on a PCB
4.1 Transient thermal impedance
Min Typ Max Unit
- - 0.95 K/W
- - 60 K/W
- - 50 K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
0.1
10-1
0.05
0.02
10-2
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03nm44
P
δ=
tp
T
tp
t
T
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 11238
Product data
Rev. 01 — 11 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4 of 15