BUK7526-100B Datasheet, PDF (8/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/7626-100B
TrenchMOS™ standard level FET
5
VGS(th)
(V)
4
3
max
typ
03aa32
10-1
ID
(A)
10-2
10-3
03aa35
min typ
max
2
min
10-4
1
10-5
0
-60
0
60
120 _{Tj (°C)} 180
10-6
0
2
4
6
VGS (V)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C; V_DS = V_GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
35
gfs
(S)
28
21
14
7
03nm37
3000
C
(pF)
2000
1000
Ciss
Coss
Crss
03nm42
0
0
25
50
75
100
ID (A)
T_j = 25 °C; V_DS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
0
10-2
10-1
1
10
102
VDS (V)
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 11238
Product data
Rev. 01 — 11 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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