BUK7526-100B Datasheet, PDF (7/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/7626-100B
TrenchMOS™ standard level FET
150
Label is VGS (V)
ID
10
(A)
20
100
7
6.5
6
50
5.5
5
4.5
0
0
2
4
6
03nm40
8
7.5
8
10
VDS (V)
50
RDSon
(mΩ)
43
36
29
22
15
5
03nm39
10
15 _{VGS (V)} 20
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
60
RDSon
(mΩ)
03nm41
2.5
Label is VGS (V)
a
50
5.5
2
6
6.5
40
1.5
78
30
1
20
20
9
10
0.5
03ng41
10
0
25
50
75 _{ID (A)} 100
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11238
Product data
Rev. 01 — 11 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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