BUK714R1-40BT Datasheet, PDF (9/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK71/794R1-40BT
TrenchMOS™ standard level FET
100
03nq19
ID
(A)
75
50
Tj = 175 °C
Tj = 25 °C
25
10
VGS
(V)
8
6
4
2
03nq21
VDD = 14 V
VDD = 32 V
0
0
2
4 _{VGS (V)} 6
0
0
25
50
75 _{Qg (nC)} 100
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
03nq79
03nq20
1.8
100
VF
IS
(V)
(A)
1.6
75
Tj = 175 °C
1.4
50
Tj = 25 °C
1.2
25
1.0
0
50
100
150 _{Tj (°C)} 200
0
0.0
0.3
0.6
0.9 _{VSD (V)1.2}
I_F = 1 mA
Fig 15. Forward voltage of temperature sense diode as
a function of junction temperature; typical
values.
V_GS = 0 V
Fig 16. Reverse diode current as a function of reverse
diode voltage; typical values.
9397 750 13954
Product data
Rev. 01 — 4 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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