BUK714R1-40BT Datasheet, PDF (2/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK71/794R1-40BT
TrenchMOS™ standard level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V;
Figure 2 and 3
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_DR
reverse drain current (DC)
T_mb = 100 °C; V_GS = 10 V; Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
Figure 3
T_mb = 25 °C; Figure 1
T_mb = 25 °C
I_DRM
peak reverse drain current
Avalanche ruggedness
E_DS(AL)S non-repetitive drain-source avalanche
energy
Electrostatic discharge
V_esd
Electrostatic discharge voltage; pins
1,3,5
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
unclamped inductive load; I_D = 75 A;
V_DS ≤ 40 V; V_GS = 10 V; R_GS = 50 Ω;
starting T_mb = 25 °C
Human Body Model; C = 100 pF;
R = 1.5 kΩ
Min
-
-
-
[1] _-
[2] _-
[2] _-
-
-
−55
−55
[1] _-
[2] _-
-
-
-
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Max Unit
40
V
40
V
±20
V
187
A
75
A
75
A
748
A
272
W
+175 °C
+175 °C
187
A
75
A
748
A
1.5
J
4
kV
9397 750 13954
Product data
Rev. 01 — 4 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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