BUK714R1-40BT Datasheet, PDF (6/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK71/794R1-40BT
TrenchMOS™ standard level FET
Table 4: Characteristics…continued
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
L_s
internal source inductance from source lead to source
-
7.5
-
nH
bond pad; lead length 6 mm
Source-drain diode
V_SD
source-drain (diode forward) I_S = 25 A; V_GS = 0 V;
-
voltage
Figure 16
t_rr
reverse recovery time
I_S = 20 A; dI_S/dt = −100 A/µs
-
Q_r
recovered charge
V_GS = −10 V; V_DS = 30 V
-
0.85
1.2
V
70
-
ns
55
-
nC
9397 750 13954
Product data
Rev. 01 — 4 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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