BUK714R1-40BT Datasheet, PDF (1/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

BUK71/794R1-40BT
TrenchMOS™ standard level FET
Rev. 01 — 4 November 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology. The devices
include TrenchPLUS diodes for over-temperature protection.
Product availability:
BUK714R1-40BT in SOT426 (D²-PAK)
BUK794R1-40BT in SOT263B (TO-220AB).
1.2 Features
s Integrated temperature sensor
s Very low on-state resistance
s Q101 compliant
s 175 °C rated.
1.3 Applications
s Electrical Power Assisted Steering
s Motors, lamps and solenoids
s 12 V loads
s General purpose power switching.
1.4 Quick reference data
s R_DSon = 3.4 mΩ (typ)
s V_DS ≤ 40 V
s I_D ≤ 75 A
s P_tot ≤ 272 W.
2. Pinning information
Table 1: Pinning - SOT426 and SOT263B, simplified outline and symbol
Pin Description
Simplified outline
Symbol
1 gate (g)
2 anode (a)
mb
mb
d
a
3 drain (d)
4 cathode (k)
g
5 source (s)
12 345
mb mounting base;
connected to drain (d)
Front view
MBK127
SOT426 (D²-PAK)
1
5
MBL263
SOT263B (TO-220AB)
03nm72
s
k