BUK6E2R0-30C_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6E2R0-30C
N-channel TrenchMOS intermediate level FET
10
V_GS
(V)
8
6
4
2
0
0
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14V
V_DS = 24V
60
120
180
240
Q_G (nC)
10⁵
C
(pF)
10⁴
10³
10²
10^-1
1
003aae009
Ciss
Coss
Crss
10
10²
VDS (V)
Fig 13. Gate-source voltage as a function of gate
charge; typical values
100
I_S
(A)
80
Fig 14. Input, output and reverse transfer capacitance
as a function of drain-source voltage; typical
values
001aal534
60
40
T_j = 175 °C
T_j = 25 °C
20
0
0
0.3
0.6
0.9
1.2
V_SD (V)
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK6E2R0-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 September 2010
© NXP B.V. 2010. All rights reserved.
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