BUK6E2R0-30C_15 Datasheet, PDF (5/15 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6E2R0-30C
N-channel TrenchMOS intermediate level FET
5. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction see Figure 4
to mounting base
thermal resistance from junction vertical in free air
to ambient
Min Typ Max Unit
-
-
0.49 K/W
-
50 -
K/W
1
Zth(j-mb)
(K/W)
10^-1
δ = 0.5
0.2
0.1
0.05
10^{-2 0.02}
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P
δ = ^tp
T
single shot
t_p
t
T
10^-3
10^-6
10^-5
10^-4
10^-3
10^-2
10^-1
1
t_p (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK6E2R0-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 September 2010
© NXP B.V. 2010. All rights reserved.
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