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| BUK6E2R0-30C_15 Datasheet, PDF (4/15 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET | |||
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NXP Semiconductors
300
ID
(A)
250
200
150
100
50
0
0
003aae232
(1)
50
100
150
200
Tmb (°C)
BUK6E2R0-30C
N-channel TrenchMOS intermediate level FET
120
Pder
(%)
80
03na19
40
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
104
ID
(A)
103
102
Limit RDSon= VDS / ID
10
1
10-1
10-2
10-1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae233
tp =10 μ s
100 μ s
DC
1 ms
10 ms
100 ms
10
102
V DS(V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK6E2R0-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 7 September 2010
© NXP B.V. 2010. All rights reserved.
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