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| BUK6E2R0-30C_15 Datasheet, PDF (10/15 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET | |||
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NXP Semiconductors
BUK6E2R0-30C
N-channel TrenchMOS intermediate level FET
10
RDSon
(mΩ)
8
6
4
2
0
0
003aae238
VGS (V) = 3.6
3.8
4
4.5
5
10
25
50
75
100
ID (A)
Fig 16. Drain-source on-state resistance as a function of drain current; typical values
BUK6E2R0-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 7 September 2010
© NXP B.V. 2010. All rights reserved.
10 of 15
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