BUK662R7-55C_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK662R7-55C
N-channel TrenchMOS intermediate level FET
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
10
V_GS
(V)
8
6
4
2
0
0
003aae204
V_DS = 14 V
V_DS = 44 V
100
200
300
Q_G(nC)
Fig 13. Gate charge waveform definitions
10⁵
C
(pF)
10⁴
10³
10²
003aae205
C_iss
C_oss
C_rss
10
10^−1
1
10
10²
V_DS (V)
Fig 14. Gate-source voltage as a function of gate
charge; typical values
100
I_S
(A)
80
003aae207
60
40
20
0
0
T_j = 175 °C
0.3
0.6
T_j = 25 °C
0.9
1.2
V_SD (V)
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 16. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
BUK662R7-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 7 September 2010
© NXP B.V. 2010. All rights reserved.
9 of 14