BUK662R7-55C_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK662R7-55C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 25 V
Min Typ Max Unit
-
0.85 1.2 V
-
67
-
ns
-
176 -
nC
100
I_D
(A)
75
003aae201
50
T_j = 175 °C
T_j = 25 °C
25
0
0
2
4
6
V_GS (V)
100
I_D
10 5 4
3.8
(A)
80
60
40
20
0
0
0.5
1
003aae200
V_GS (V) = 3.6
3.4
3.2
1.5
2
V_DS (V)
Fig 5. Transfer characteristics: drain current as a
Fig 6. Output characteristics: drain current as a
function of gate-source voltage; typical values
function of drain-source voltage; typical values
250
g_fs
(S)
200
003aae199
20
R_DSon
(mΩ)
16
003aae202
150
12
100
8
50
4
0
0
20
40
60
80
100
I_D (A)
0
0
4
8
12
16
20
V_GS (V)
Fig 7. Forward transconductance as a function of
drain current; typical values
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK662R7-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 7 September 2010
© NXP B.V. 2010. All rights reserved.
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