BUK662R7-55C_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK662R7-55C
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V_DS
V_GS
Parameter
drain-source voltage
gate-source voltage
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
DC
Pulsed
Min
-
[1]
-16
[2]
-20
I_D
drain current
I_DM
peak drain current
T_mb = 25 °C; V_GS = 10 V; see Figure 1 ^[3]
-
T_mb = 100 °C; V_GS = 10 V; see Figure 1 ^[3]
-
T_mb = 25 °C; t_p ≤ 10 µs; pulsed;
-
see Figure 3
P_tot
total power dissipation
T_mb = 25 °C; see Figure 2
-
T_stg
storage temperature
-55
T_j
junction temperature
-55
Source-drain diode
I_S
source current
I_SM
peak source current
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
E_DS(AL)R
repetitive drain-source
avalanche energy
T_mb = 25 °C
t_p ≤ 10 µs; pulsed; T_mb = 25 °C
[3]
-
-
I_D = 120 A; V_sup ≤ 55 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped
-
[4][5][6] _-
[1] -16V accumulated duration not to exceed 168 hrs.
[2] Accumulated pulse duration not to exceed 5mins.
[3] Continuous current is limited by package.
[4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[5] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[6] Refer to application note AN10273 for further information.
Max Unit
55 V
16 V
20 V
120 A
120 A
907 A
306 W
175 °C
175 °C
120 A
907 A
724 mJ
-
J
BUK662R7-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 7 September 2010
© NXP B.V. 2010. All rights reserved.
3 of 14