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| BUK662R7-55C_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET | |||
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NXP Semiconductors
250
ID
(A)
200
150
100
50
0
0
003aae196
(1)
50
100
150
200
Tmb (°C)
BUK662R7-55C
N-channel TrenchMOS intermediate level FET
120
Pder
(%)
80
03na19
40
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS / ID
10
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae197
tp =10 μ s
100 μ s
DC
1 ms
10 ms
100 ms
10-1
10-1
1
10
102
V DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK662R7-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 â 7 September 2010
© NXP B.V. 2010. All rights reserved.
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