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| BUK6246-75C_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET | |||
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NXP Semiconductors
BUK6246-75C
N-channel TrenchMOS intermediate level FET
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
10
VGS
(V)
8
6
4
2
0
0
003aae878
14V
VDS= 60V
10
20 QG (nC) 30
Fig 13. Gate charge waveform definitions
104
C
(pF)
103
003aae879
Ciss
102
Coss
Crss
10
1
10-2
10-1
1
10 VDS(V) 102
Fig 14. Gate-source voltage as a function of gate
charge; typical values
003aae877
30
IS
(A)
20
10
0
0
Tj = 175 °C
0.3
0.6
Tj = 25 °C
0.9 VSD(V) 1.2
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 16. Source current as a function of source-drain
voltage; typical values
BUK6246-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 13 July 2011
© NXP B.V. 2011. All rights reserved.
9 of 14
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