BUK6246-75C_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
003aae880
30
I_D
(A)
20
BUK6246-75C
N-channel TrenchMOS intermediate level FET
120
P_der
(%)
80
03aa16
10
40
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
10³
I_D
(A)
10²
10
Limit R_DSon= V_DS/ I_D
1
10^-1
10^-1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae874
DC
10
t_p =10 μ s
100 μ s
1 ms
10 ms
100 ms
10²
V _DS(V)
10³
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK6246-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 July 2011
© NXP B.V. 2011. All rights reserved.
4 of 14