BUK6246-75C_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6246-75C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 25 V
Min Typ Max Unit
-
0.9 1.2 V
-
42
-
ns
-
64
-
nC
40
g_fs
(S)
30
20
10
0
0
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10
20 _{ID (A)} 30
50
I_D
(A)
40
30
20
10
0
0
10.0
2
4
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5.0
4.5
V_GS(V) = 4.0
3.8
3.6
3.4
3.2
6 _VDS(V) 8
Fig 5. Forward transconductance as a function of
drain current; typical values
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30
I_D
(A)
20
T_j = 175 °C
10
T_j = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
100
R_DSon
(mΩ)
75
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50
25
0
0
2
4 _VGS(V) 6
0
0
5
10
15 _VGS(V) 20
Fig 7. Transfer characteristics: drain current as a
Fig 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
BUK6246-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 July 2011
© NXP B.V. 2011. All rights reserved.
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