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| BUK6246-75C_15 Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET | |||
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NXP Semiconductors
BUK6246-75C
N-channel TrenchMOS intermediate level FET
Table 1. Quick reference data â¦continued
Symbol Parameter
Conditions
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 22 A; Vsup ⤠75 V;
RGS = 50 â¦; VGS = 10 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge
ID = 25 A; VDS = 60 V;
VGS = 10 V;
see Figure 13; see Figure 14
Min Typ Max Unit
-
-
25 mJ
-
6.84 -
nC
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
gate
D
drain
S
source
D
mounting base;
connected to drain
3. Ordering information
Simplified outline
mb
2
1
3
SOT428 (DPAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK6246-75C
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
BUK6246-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 13 July 2011
© NXP B.V. 2011. All rights reserved.
2 of 14
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