BUK1M200-50SDLD Datasheet, PDF (9/14 Pages) NXP Semiconductors – Quad channel TOPFET

Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFET™
500
IIS
(mA)
(1)
400
03pa80
4000
1 / td(sc)
(s^-1)
3000
03pa81
300
(2)
(3)
200
(4)
100
2000
1000
0
−50
0
50
100
150
Tj (°C)
(1) V_IS = 5 V; device in latched mode.
(2) V_IS = 3 V; device in latched mode.
(3) V_IS = 5 V; device in normal mode.
(4) V_IS = 4 V; device in normal mode.
Fig 13. Input-source current as a function of junction
temperature; typical values.
0
0
5.5
11
V_IS ≥ 4 V; T_j ≤ 125 °C
16.5
22
POV (W)
Fig 14. Reciprocal of short circuit response time as a
function of total overload power; single device
dissipating; typical values
2.4
VIS(rst)
(V)
2.2
2
03pa82
400
ID
(mA)
300
200
100
03pa83
1.8
-50
20
90 _{Tj (°C)} 160
t_r = 100 µs
Fig 15. Input-source reset voltage as a function of
junction temperature; typical values.
0
57
59
61
63
65
67
VDS (V)
V_IS = 0 V; t_p = 300 µs
Fig 16. Overvoltage clamping characteristic; drain
current as a function of drain-source voltage;
typical values.
9397 750 10956
Product data
Rev. 01 — 02 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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