BUK1M200-50SDLD Datasheet, PDF (7/14 Pages) NXP Semiconductors – Quad channel TOPFET

Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFET™
[4] The TOPFET switches off to protect itself when one of the overload thresholds is exceeded. It remains latched off until reset by the
input.
[5] Power threshold for protection to operate.
[6] To reset the latched state, the input-source voltage is reduced from 5 V to 1 V.
[7] Trip time t_(trip) varies with overload dissipation P_OV according to the formula t_(trip) = t_d(sc) / [P_OV / P_OV(th) - 1]
03pa71
03pa73
2.5
500
a
RDSon
(mΩ)
2
375
1.5
250
1
125
0.5
0
-50
0
50
100 _{Tj (°C)} 150
a = --------^R----^D----^S--^o---ⁿ--------
R _{D S o n ( 25 ° C )}
Fig 5. Normalized drain-source on-state resistance
factor as a function of junction temperature.
0
0
2
4
6
8
VIS (V)
T_j = 25 °C; I_D = 100 mA; t_p = 300 µs
Fig 6. Drain-source on-state resistance as a function
of input-source voltage; typical values.
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1.6
1.8
V_IS = 7 V
ID
ID
(A)
6V
(A)
1.2
5V
1.2
4V
0.8
0.6
0.4
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0
0
10
20 _{VDS (V)} 30
0
0
2
4
6 VIS (V) 8
T_j = 25 °C; t_p = 300 µs
Fig 7. Output characteristics; drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; V_DS = 10 V; t_p = 300 µs
Fig 8. Transfer characteristics; drain current as a
function of input-source voltage; typical values.
9397 750 10956
Product data
Rev. 01 — 02 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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