BUK1M200-50SDLD Datasheet, PDF (10/14 Pages) NXP Semiconductors – Quad channel TOPFET

Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFET™
10-5
IDSS
(A)
10-6
10-7
03pa84
1.8
max.
ID
(A)
typ.
1.2
min.
0.6
03pa72
10-8
-50
0
50
100 _{Tj (°C)} 150
V_DS = 40 V; V_IS = 0 V
Fig 17. Drain-source leakage current as a function of
junction temperature; typical values.
0
0
40
80
120
160
Tsp (°C)
V_IS = 5 V
Fig 18. Drain current limiting as a function of solder
point temperature.
7. Dynamic characteristics
Table 6: Switching characteristics
Symbol Parameter
Conditions
Turn-on measured from the input going HIGH
t_d(on)
t_r
t_d(off)
t_f
turn-on delay time
rise time
turn-off delay time
fall time
R_L = 50 Ω; I_D = 250 mA; V_IS = 5 V;
Figure 19 and 20; T_sp = 25 °C
Min Typ Max Unit
-
5
12
µs
-
11
30
µs
-
25
65
µs
-
14
35
µs
VDD
VIS
MBL853
RL
VDS
P
VDS
td(on)
tf
90%
10%
90%
VIS
10%
td(off)
tr
MBL854
Fig 19. Test circuit for resistive load switching times. Fig 20. Resistive load switching waveforms.
9397 750 10956
Product data
Rev. 01 — 02 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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