BFG590W Datasheet, PDF (9/12 Pages) NXP Semiconductors – NPN 5 GHz wideband transistors

Philips Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG590W; BFG590W/X
SPICE parameters for the BFG590W die
SEQUENCE No. PARAMETER VALUE UNIT
1
IS
1.341 fA
2
BF
123.5 −
3
NF
0.988 −
4
VAF
75.85 V
5
IKF
9.656 A
6
ISE
232.2 fA
7
NE
2.134 −
8
BR
10.22 −
9
NR
1.016 −
10
VAR
1.992 V
11
IKR
294.1 mA
12
ISC
211.0 aA
13
14
15
16
17
18
19 ⁽¹⁾
20 ⁽¹⁾
21 ⁽¹⁾
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
0.997 −
5.000 Ω
1.000 µA
5.000 Ω
1.275 Ω
920.6 mΩ
0.000 −
1.110 eV
3.000 −
22
CJE
3.821 pF
23
VJE
600.0 mV
24
MJE
0.348 −
25
TF
13.60 ps
26
XTF
71.73 −
27
VTF
10.28 V
28
ITF
1.929 A
29
PTF
0.000 deg
30
CJC
1.409 pF
31
VJC
219.4 mV
32
33
34
35 ⁽¹⁾
MJC
XCJC
TR
CJS
0.166 −
0.150 −
2.340 ns
0.000 F
SEQUENCE No.
36 ⁽¹⁾
37 ⁽¹⁾
38
PARAMETER
VJS
MJS
FC
VALUE UNIT
750.0 mV
0.000 −
0.733 −
Note
1. These parameters have not been extracted, the
default values are shown.
handbook, halfpage
C _cb
L1
B
C _be
LB
B' C'
E'
LE
L3
L2
C
Cce
MBC964
E
QL_B = 50; QL_E = 50; QL_B,E(f) = QL_B,E√(f/f_c)
f_c = scaling frequency = 1 GHz.
Fig.14 Package equivalent circuit SOT343N.
List of components (see Fig.14)
DESIGNATION
C_be
C_cb
C_ce
L1
L2
L3
L_B
L_E
VALUE
70
50
115
0.34
0.10
0.25
0.40
0.40
UNIT
fF
fF
fF
nH
nH
nH
nH
nH
1998 Oct 15
9