BFG590W Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN 5 GHz wideband transistors

Philips Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG590W; BFG590W/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
T_s ≤ 85 °C; see Fig.2; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
3
200
500
+150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-s}
thermal resistance from junction to soldering point T_s ≤ 85 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
VALUE
180
UNIT
K/W
600
handbook, halfpage
P _tot
(mW)
400
MBG248
200
0
0
50
100
150
Ts
(^o C) ²⁰⁰
Fig.2 Power derating curve.
1998 Oct 15
3