BFG590W Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN 5 GHz wideband transistors

Philips Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG590W; BFG590W/X
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• MATV/CATV amplifiers and RF
communications subscriber
equipment in the GHz range
• Ideally suitable for use in class-A,
(A)B and C amplifiers with either
pulsed or continuous drive.
DESCRIPTION
NPN silicon planar epitaxial transistor
in a 4-pin dual-emitter SOT343N
plastic package.
page
4
3
PINNING
PIN
DESCRIPTION
BFG590W
1 collector
2 base
3 emitter
4 emitter
BFG590W/X
1 collector
2 emitter
3 base
4 emitter
1
Top view
2
MBK523
Fig.1 SOT343N.
MARKING
TYPE NUMBER
BFG590W
BFG590W/X
CODE
T1
T2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V_CBO
V_CEO
I_C
P_tot
h_FE
C_re
f_T
G_UM
|S₂₁|²
collector-base voltage open emitter
−
collector-emitter voltage open base
−
collector current (DC)
−
total power dissipation T_s ≤ 85 °C
−
DC current gain
I_C = 70 mA; V_CE = 8 V
60
feedback capacitance I_C = 0; V_CB = 8 V; f = 1 MHz
−
transition frequency
I_C = 80 mA; V_CE = 4 V; f = 1 GHz; T_amb = 25 °C −
maximum unilateral
power gain
I_C = 80 mA; V_CE = 4 V; f = 900 MHz; T_amb = 25 °C −
insertion power gain
I_C = 80 mA; V_CE = 4 V; f = 900 MHz; T_amb = 25 °C −
−
20 V
−
15 V
−
200 mA
−
500 mW
90 250
0.7 −
pF
5
−
GHz
13 −
dB
11 −
dB
1998 Oct 15
2