BFG590W Datasheet, PDF(4/12 Page) NXP Semiconductors

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BFG590W Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN 5 GHz wideband transistors

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Philips Semiconductors

NPN 5 GHz wideband transistors

Product speciï¬cation

BFG590W; BFG590W/X

CHARACTERISTICS

Tj = 25 Â°C unless otherwise speciï¬ed.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

hFE

Cre

GUM

|S21|2

PL1

collector-base breakdown voltage IC = 0.1 mA; IE = 0

collector-emitter breakdown voltage IC = 10 mA; IB = 0

emitter-base breakdown voltage IE = 0.1 mA; IC = 0

collector leakage current

VCB = 10 V; IE = 0

DC current gain

IC = 70 mA; VCE = 8 V

transition frequency

IC = 80 mA; VCE = 4 V; f = 1 GHz; â

Tamb = 25 Â°C

feedback capacitance

IC = 0; VCB = 8 V; f = 1 MHz

maximum unilateral power gain;

note 1

IC = 80 mA; VCE = 4 V; f = 900 MHz; â

Tamb = 25 Â°C

IC = 80 mA; VCE = 4 V; f = 2 GHz; â

Tamb = 25 Â°C

insertion power gain

IC = 80 mA; VCE = 4 V; f = 1 GHz; â

Tamb = 25 Â°C

output power at 1 dB gain

compression

IC = 80 mA; VCE = 5 V; f = 900 MHz; â

RL = 50 â¦; Tamb = 25 Â°C

100 nA

90 250

GHz

0.7 â

13 â

7.5 â

11 â

21 â

dBm

Note

1. GUM is the maximum unilateral power gain, assuming S12 is zero. GUM

log -(---1-----â------S----1---1----S2---)-2---1(---1-2----â------S----2--2-----2---)-

dB.

1998 Oct 15

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