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BFG480W_15 Datasheet, PDF (9/16 Pages) NXP Semiconductors – NPN wideband transistor | |||
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NXP Semiconductors
NPN wideband transistor
Product specification
BFG480W
Noise data
VCE = 2 V; typical values.
f
IC
(MHz) (mA)
Fmin
(dB)
900
2
1.1
4
1.1
6
1.2
8
1.2
10
1.3
20
1.6
40
2.0
60
2.3
80
2.9
2000 2
2.4
4
2.0
6
1.8
8
1.8
10
1.8
12
1.8
14
1.8
20
1.9
40
2.3
60
2.6
80
2.8
ïmag
0.41
0.31
0.27
0.26
0.28
0.39
0.49
0.57
0.45
0.57
0.49
0.46
0.44
0.43
0.44
0.44
0.46
0.52
0.56
0.60
ïangle
96.1
106.6
118.4
131.7
143.2
166.2
176.0
179.5
177.3
171.9
178.9
ï175.7
ï171.7
ï168.4
ï165.3
ï163.7
ï158.3
ï150.2
ï147.7
ï146.1
rn
(ï)
0.21
0.14
0.12
0.10
0.10
0.07
0.07
0.07
0.18
0.09
0.08
0.09
0.09
0.09
0.10
0.10
0.11
0.14
0.18
0.22
4
handbook, halfpage
Fmin
(dB)
3
2
1
2 GHz
900 MHz
MGR634
0
0
20
40
60
80
IC (mA)
VCE = 2 V.
Fig.13 Minimum noise figure as a function of
collector current; typical values.
APPLICATION INFORMATION
RF performance at Ts ï£ 60 ï°C in a common emitter test circuit (see Figs 18 and 19).
MODE OF OPERATION
f
VCE
(GHz)
(V)
ICQ
(mA)
PL
(mW)
Pulsed; class-AB; ï¤ < 1 : 2; tp = 5 ms
2
3.6
1
100
Gp
(dB)
typ. 13.5
ï¨C
(%)
typ. 45
1998 Oct 21
9
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