BFG480W_15 Datasheet, PDF (10/16 Pages) NXP Semiconductors – NPN wideband transistor

NXP Semiconductors
NPN wideband transistor
Product specification
BFG480W
handbook,¹h⁶alfpage
Gp
(dB)
12
8
Gp
η_C
MGR635
80
η_C
(%)
60
40
4
20
0
0
10
14
18
22
26
PL (dBm)
Pulsed, class-AB operation;  < 1 ; 2; t_p = 5 ms.
f = 2 GHz; V_CE = 2.4 V; I_CQ = 1 mA; tuned at P_L = 100 mW.
Fig.14 Power gain and collector efficiency as a
function of load power; typical values.
16
handbook, halfpage
Gp
(dB)
12
8
MGR636
80
η_C
(%)
Gp
60
η_C
40
4
20
0
0
10
14
18
22
26
PL (dBm)
Pulsed, class-AB operation;  < 1 ; 2; t_p = 5 ms.
f = 2 GHz; V_CE = 3.6 V; I_CQ = 1 mA; tuned at P_L = 100 mW.
Fig.15 Power gain and collector efficiency as a
function of load power; typical values.
handbook,¹h⁰alfpage
Zi
(Ω)
ri
8
6
4
2
xi
0
1.8
1.85
1.9
MGR637
1.95
2
f (GHz)
handbook,³h⁰alfpage
ZL
(Ω)
20
MGR638
RL
10
XL
0
1.8
1.85
1.9
1.95
2
f (GHz)
V_CE = 3.6 V; I_CQ = 1 mA; P_L = 100 mW; T_s  60 C.
Fig.16 Input impedance as function of frequency
(series components); typical values.
V_CE = 3.6 V; I_CQ = 1 mA; P_L = 100 mW; T_s  60 C.
Fig.17 Load impedance as a function of frequency
(series components); typical values.
1998 Oct 21
10