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| BFG480W_15 Datasheet, PDF (4/16 Pages) NXP Semiconductors – NPN wideband transistor | |||
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NXP Semiconductors
NPN wideband transistor
Product specification
BFG480W
CHARACTERISTICS
Tj = 25 ï°C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)CBO collector-base breakdown voltage IC = 50 ïA; IE = 0
14.5 ï
ï
V
V(BR)CEO collector-emitter breakdown voltage IC = 5 mA; IB = 0
4.5 ï
ï
V
V(BR)EBO emitter-base breakdown voltage
IE = 100 ïA; IC = 0
1
ï
ï
V
ICBO
collector-base leakage current
VCE = 5 V; VBE = 0
ï
ï
70 nA
hFE
DC current gain
IC = 80 mA; VCE = 2 V; see Fig.3 40 60 100
Cc
collector capacitance
IE = ie = 0; VCB = 2 V; f = 1 MHz
ï
1.4 ï
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz ï
2.2 ï
pF
Cre
feedback capacitance
IC = 0; VCB = 2 V; f = 1 MHz;
see Fig.4
ï
340 ï
fF
fT
Gmax
S21 2
F
transition frequency
maximum power gain; note 1
insertion power gain
noise figure
PL1
output power at 1 dB gain
compression
ITO
third order intercept point
IC = 80 mA; VCE = 2 V; f = 2 GHz; ï
Tamb = 25 ï°C; see Fig.5
IC = 80 mA; VCE = 2 V; f = 2 GHz; ï
Tamb = 25 ï°C; see Figs 7 and 8
IC = 80 mA; VCE = 2 V; f = 2 GHz; ï
Tamb = 25 ï°C; see Fig.8
IC = 8 mA; VCE = 2 V; f = 900 MHz; ï
ïS = ïopt; see Fig.13
IC = 8 mA; VCE = 2 V; f = 2 GHz; ï
ïS = ïopt; see Fig.13
Class-AB; ï¤ < 1 : 2; tp = 5 ms;
ï
VCE = 3.6 V; ICQ = 1 mA; f = 2 GHz
IC = 80 mA; VCE = 2 V; f = 2 GHz; ï
ZS = ZS opt; ZL = ZL opt; note 2
21 ï
16 ï
12 ï
1.2 ï
1.8 ï
20 ï
28 ï
GHz
dB
dB
dB
dB
dBm
dBm
Notes
1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8.
2. ZS is optimized for noise; ZL is optimized for gain.
1998 Oct 21
4
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