BFG480W_15 Datasheet, PDF (2/16 Pages) NXP Semiconductors – NPN wideband transistor

NXP Semiconductors
NPN wideband transistor
Product specification
BFG480W
FEATURES
 High power gain
 High efficiency
 Low noise figure
 High transition frequency
 Emitter is thermal lead
 Low feedback capacitance
 Linear and non-linear operation.
APPLICATIONS
 RF front end with high linearity system demands
(CDMA)
 Common emitter class AB driver.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a 4-pin dual-emitter
SOT343R plastic package.
PINNING
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
handbook, halfpage
3
4
2
Top view
1
MSB842
Marking code: P6.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
V_CEO
I_C
P_tot
f_T
G_max
F
G_p
_C
collector-emitter voltage open base

collector current (DC)
80
total power dissipation
transition frequency
T_s  60 C

I_C = 80 mA; V_CE = 2 V; f = 2 GHz; T_amb = 25 C 21
maximum gain
noise figure
power gain
collector efficiency
I_C = 80 mA; V_CE = 2 V; f = 2 GHz; T_amb = 25 C
I_C = 8 mA; V_CE = 2 V; f = 2 GHz; _S = _opt
Pulsed; class-AB;  < 1 : 2; t_p = 5 ms;
V_CE = 3.6 V; f = 2 GHz; P_L = 100 mW
Pulsed; class-AB;  < 1 : 2; t_p = 5 ms;
V_CE = 3.6 V; f = 2 GHz; P_L = 100 mW
16
1.8
13.5
45
MAX.
4.5
250
360





UNIT
V
mA
mW
GHz
dB
dB
dB
%
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
1998 Oct 21
2