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BFG403W_15 Datasheet, PDF (9/13 Pages) NXP Semiconductors – NPN 17 GHz wideband transistor | |||
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NXP Semiconductors
NPN 17 GHz wideband transistor
Product specification
BFG403W
SPICE parameters for the BFG403W die
SEQUENCE No. PARAMETER VALUE UNIT
1
IS
5.554 aA
2
BF
145.0 ï
3
NF
0.993 ï
4
VAF
31.12 V
5
IKF
35.75 mA
6
ISE
35.35 fA
7
NE
3.000 ï
8
BR
11.37 ï
9
NR
0.985 ï
10
VAR
1.874 V
11
IKR
0.014 A
12
ISC
57.08 aA
13
NC
1.546 ï
14
RB
122.4 ï
15
IRB
0.000 A
16
RBM
52.45 ï
17
RE
1.511 ï
18
19 (1)
20 (1)
21 (1)
RC
15.12 ï
XTB
1.500 ï
EG
1.110 eV
XTI
3.000 ï
22
CJE
36.61 fF
23
VJE
900.0 mV
24
MJE
0.346 ï
25
TF
4.122 ps
26
XTF
68.20 ï
27
VTF
2.004 V
28
ITF
0.179 A
29
PTF
0.000 deg
30
CJC
16.21 fF
31
VJC
556.9 mV
32
MJC
0.207 ï
33
34 (1)
35 (1)
36 (1)
37 (1)
XCJC
TR
CJS
VJS
MJS
0.500 ï
00.00 ns
78.59 fF
418.3 mV
0.239 ï
38
FC
0.550 ï
SEQUENCE No. PARAMETER VALUE UNIT
39 (2)(3)
40 (2)
41 (3)
Cbp
Rsb1
Rsb2
145
fF
25
ï
19
ï
Notes
1. These parameters have not been extracted, the
default values are shown.
2. Bonding pad capacity Cbp in series with substrate
resistance Rsb1 between Bï¢ and Eï¢.
3. Bonding pad capacity Cbp in series with substrate
resistance Rsb2 between Cï¢ and Eï¢.
handbook, halfpage
C cb
L1
B
C be
B' C'
E'
L2
C
Cce
MGD956
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,Eï(f/fc)
fc = scaling frequency = 1 GHz.
Fig.14 Package equivalent circuit SOT343R2.
List of components (see Fig.14)
DESIGNATION
Cbe
Ccb
Cce
L1
L2
L3 (note 1)
VALUE
80
2
80
1.1
1.1
0.25
UNIT
fF
fF
fF
nH
nH
nH
Note
1. External emitter inductance to be added separately
due to the influence of the printed-circuit board.
1998 Mar 11
9
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