BFG403W_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – NPN 17 GHz wideband transistor

NXP Semiconductors
NPN 17 GHz wideband transistor
Product specification
BFG403W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
open emitter
open base
open collector
T_s  140 C; note 1; see Fig.2
Note
1. T_s is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to soldering point
MIN.





65

MAX.
10
4.5
1
3.6
16
+150
150
UNIT
V
V
V
mA
mW
C
C
VALUE
820
UNIT
K/W
handbook,²h⁰alfpage
Ptot
(mW)
10
MGD957
0
0
40
80
120
160
Ts (°C)
Fig.2 Power derating curve.
1998 Mar 11
3