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| BFG403W_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – NPN 17 GHz wideband transistor | |||
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NXP Semiconductors
NPN 17 GHz wideband transistor
Product specification
BFG403W
CHARACTERISTICS
Tj = 25 ï°C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE
Cc
Ce
Cre
collector-base breakdown voltage IC = 2.5 ïA; IE = 0
collector-emitter breakdown voltage IC = 1 mA; IB = 0
emitter-base breakdown voltage IE = 2.5 ïA; IC = 0
collector-base leakage current
IE = 0; VCB = 4.5 V
DC current gain
IC = 3 mA; VCE = 2 V; see Fig.3
collector capacitance
IE = ie = 0; VCB = 2 V; f = 1 MHz
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
feedback capacitance
IC = 0; VCB = 2 V; f = 1 MHz;
see Fig.4
10 ï
ï
V
4.5 ï
ï
V
1
ï
ï
V
ï
ï
15 nA
50 80 120
ï
170 ï
fF
ï
315 ï
fF
ï
20 ï
fF
fT
Gmax
transition frequency
maximum power gain; note 1
S21 2
insertion power gain
F
noise figure
PL1
output power at 1 dB gain
compression
ITO
third order intercept point
IC = 3 mA; VCE = 2 V; f = 2 GHz;
ï
Tamb = 25 ï°C; see Fig.5
IC = 0.5 mA; VCE = 1 V; f = 900 MHz; ï
Tamb = 25 ï°C; see Figs 6 and 8
IC = 3 mA; VCE = 2 V; f = 2 GHz;
ï
Tamb = 25 ï°C; see Figs 7 and 8
IC = 0.5 mA; VCE = 1 V; f = 900 MHz; ï
Tamb = 25 ï°C; see Fig.8
IC = 3 mA; VCE = 2 V; f = 2 GHz;
ï
Tamb = 25 ï°C; see Fig.8
IC = 1 mA; VCE = 2 V; f = 900 MHz; ï
ïS = ïopt; see Fig.13
IC = 1 mA; VCE = 2 V; f = 2 GHz;
ï
ïS = ïopt; see Fig.13
IC = 1 mA; VCE = 1 V; f = 900 MHz; ï
ZS = ZS opt; ZL = ZL opt; note 2
IC = 1 mA; VCE = 1 V; f = 900 MHz; ï
ZS = ZS opt; ZL = ZL opt; note 2
17 ï
20 ï
22 ï
5
ï
14 ï
1
ï
1.6 ï
ï5 ï
6
ï
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
Notes
1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8.
2. ZS is optimized for noise; ZL is optimized for gain.
1998 Mar 11
4
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