BFG403W_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – NPN 17 GHz wideband transistor

NXP Semiconductors
NPN 17 GHz wideband transistor
Product specification
BFG403W
FEATURES
 Low current
 Very high power gain
 Low noise figure
 High transition frequency
 Very low feedback capacitance.
PINNING
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
APPLICATIONS
 Pager front ends
 RF front end
 Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
 Radar detectors.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
handbook, halfpage
3
4
2
Top view
1
MSB842
Marking code: P3.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
h_FE
C_re
f_T
G_max
F
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum power gain
noise figure
CONDITIONS
MIN. TYP. MAX. UNIT
open emitter


10 V
open base


4.5 V

3
3.6 mA
T_s  140 C


16 mW
I_C = 3 mA; V_CE = 2 V; T_j = 25 C
50 80 120
I_C = 0; V_CB = 2 V; f = 1 MHz

20 
fF
I_C = 3 mA; V_CE = 2 V; f = 2 GHz; T_amb = 25 C 
17 
GHz
I_C = 3 mA; V_CE = 2 V; f = 2 GHz; T_amb = 25 C 
22 
dB
I_C = 1 mA; V_CE = 2 V; f = 900 MHz; _S = _opt 
1

dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
1998 Mar 11
2