SI4800 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
Si4800
N-channel enhancement mode field-effect transistor
40
I_S
V_GS = 0 V
(A)
30
20
10
150 ºC
03af88
T_j = 25 ºC
10
V_GS
(V)
8
T_j = 25 ºC
I_D = 9 A
V_DD = 15 V
6
4
2
03af90
0
0
0.4
0.8
1.2
V_SD (V)
0
0
10
20
30
40
Q_G (nC)
T_j = 25 °C and 150 °C; V_GS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I_D = 9 A; V_DD = 15 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 08412
Product data
Rev. 01 — 13 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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