SI4800 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
Si4800
N-channel enhancement mode field-effect transistor
40
I_D ^Tj ^{= 25 ºC 10 V 5 V 4.5 V}
(A)
30
20
03af85
4V
3.5 V
40
I_D
V_DS > I_D x R_DSon
(A)
30
20
03af87
10
3V
V_GS = 2.5 V
0
0
0.5
1
1.5
2
V_DS (V)
10
0
0
T_j = 150 ºC
1
2
25 ºC
3
4
5
V_GS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 150 °C; V_DS > I_D × R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.03
03af86
2
R_DSon ^{Tj = 25 ºC}
4.5 V
a
(Ω)
1.6
5V
0.02
1.2
V_GS = 10 V
0.8
0.01
0.4
03ad57
0
0
10
20
30
40
I_D (A)
0
-60
0
60
120 _{Tj (ºC)} 180
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = -------^R----^D----^S--^o---ⁿ-------
R
D S o n ( 25 ^°C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08412
Product data
Rev. 01 — 13 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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