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SI4800 Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
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Philips Semiconductors
Si4800
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
VGS(th)
IDSS
gate-source threshold voltage
drain-source leakage current
IGSS
ID(on)
RDSon
gate-source leakage current
On-state drain current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VDS = VGS; Tj = 25 °C
VDS = 24 V; VGS = 0 V
Tj = 25 °C
Tj = 55 °C
VGS = ±20 V; VDS = 0 V
VDS ≥ 5; VGS = 10 V
VGS = 10 V; ID = 9 A; Figure 7 and 8
VGS = 4.5 V; ID = 7 A; Figure 7 and 8
gfs
forward transconductance
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain (reverse) diode
VDS = 15 V; ID = 9 A
ID = 9 A; VDD = 15 V; VGS = 5 V; Figure 13
VDD = 15 V; RD = 15 Ω; VGS = 10 V; RG = 6 Ω
VSD
source-drain (diode forward) voltage IS = 2.3A; VGS = 0 V; Figure 12
trr
reverse recovery time
IS = 2.3 A; dIS/dt = −100 A/µs; VGS = 0 V
Min Typ Max Unit
0.8 − − V
− − 1 µA
− − 5 µA
− − 100 nA
30 − − A
− 15.5 18.5 mΩ
− 27.5 33 mΩ
− 19 − S
− 19 − nC
− 4 − nC
− 7.5 − nC
− 11 16 ns
− 8 15 ns
− 22 30 ns
− 9 15 ns
− 0.7 1.2 V
− 50 80 ns
9397 750 08412
Product data
Rev. 01 — 13 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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