SI4800 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Si4800
N-channel enhancement mode field-effect transistor
M3D315
Rev. 01 — 13 July 2001
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™¹ technology.
Product availability:
Si4800 in SOT96-1 (SO8).
2. Features
s Low on-state resistance
s Fast switching
s TrenchMOS™ technology.
3. Applications
s DC to DC convertors
s DC motor control
s Lithium-ion battery applications
c
c
s Notebook PC
s Portable equipment applications.
4. Pinning information
Table 1: Pinning - SOT96-1, simplified outline and symbol
Pin
Description
Simplified outline
1,2,3
4
source (s)
gate (g)
8
5
5,6,7,8
drain (d)
1
Top view
4
MBK187
SOT96-1 (SO8)
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics.