SI4416DY Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
Si4416DY
N-channel enhancement mode field-effect transistor
50
IS ^{VGS = 0 V}
(A)
40
30
150 ºC
03af25
20
Tj = 25 ºC
10
0
0
0.4
0.8
1.2 ^VSD ^(V) 1.6
10
VGS ^{ID = 9 A}
(V) ^{VDD = 15 V}
8 Tj = 25 ºC
03af27
6
4
2
0
0
10
20
30 QG (nC) 40
T_j = 25 °C and 150 °C; V_GS = 0 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage;
typical values.
I_D = 9 A; V_DD =15 V
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
9397 750 08299
Product data
Rev. 01 — 05 June 2001
© Philips Electronics N.V. 2001. All rights reserved.
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