SI4416DY Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
Si4416DY
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
R_th(j-a) thermal resistance from junction to ambient
Conditions
mounted on a printed circuit board;
minimum footprint; t ≤ 10 sec. Figure 4
7.1 Transient thermal impedance
Value Unit
50 K/W
102
Zth(j-a)
(K/W)
10
δ = 0.5
0.2
0.1
0.05
0.02
1
single pulse
10-1
10-2
10-4
10-3
10-2
10-1
1
03af19
P
δ
=
tp
T
tp
t
T
10
102 tp (s) 103
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.
9397 750 08299
Product data
Rev. 01 — 05 June 2001
© Philips Electronics N.V. 2001. All rights reserved.
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